Study of optical and electrical properties of MoO3doped organic semiconductor NPB

Abstract

Abstract: Hole only single carrier devices were prepared by introducing transition metal oxide MoO₃ into the typical organic hole transport material amine derivative NPB (N,N'-diphenyl-N,N'-bis(1-naphthyl) (1,1'-biphenyl)-4,4'diamine). The results showed that the introduction of MoO₃ significantly enhances the conductivity of NPB, at an applied voltage of about 2.0 V, thecurrent density for a 100-nm-thick pure NPB device is only 1.28 mA/cm², while that for NPB∶MoO₃ (50 wt.%) device with the same film thickness is as high as 2 530 mA/cm². The absorption spectrum of the NPB∶MoO₃ film with the same doping ratio showed that there is an additional absorption peak near 500 nm, which is different from that of NPB or MoO₃, indicating that a charge transfer complex NPB⁺-MoO^-₃ has been formed in the doped system, resulting in additional hole carriers and thus enhancing the conductivity of the doped film. Further fluorescence analysis showed that the introduction of MoO₃ has a significant quenching effect on the fluorescence of NPB. The fluorescence intensity of the NPB∶MoO₃ (30 wt.%) films is reduced by two orders of magnitude compared to the pure NPB films, while that of the NPB∶MoO₃ (50 wt.%) film was essentially reduced to zero.

Key words: organic semiconductor, NPB, MoO₃, charge-transfer complex, quenching

CLC Number:

TB34

ZHAO Yu-kang, SU Jiang-sen, WU You-zhi, ZHANG Cai-rong. Study of optical and electrical properties of MoO₃doped organic semiconductor NPB[J]. Journal of Lanzhou University of Technology, 2022, 48(5): 30-34.

References

[1] TANG C W,VANSLYKE S A.Organic electroluminescent diodes [J].Applied Physics Letters,1987,51(12):913-915.
[2] HIRSCH J.Hopping transport in disordered aromatic solids:a re-interpretation of mobility measurements on PKV and TNF [J].Journal of Physics C:Solid State Physics,1979,12(2):321-335.
[3] KEPLER R G,BEESON P M,JACOBS S J,et al.Electron and hole mobility in tris(8-hydroxyquinolato-N1,O8) aluminum [J].Applied Physics Letters,1995,66(26):3618-3620.
[4] VOLLBRECHT J,BLAZY S,DIERKS P,et al.Electroluminescent and optoelectronic properties of OLEDs with bay-extended,distorted perylene esters as emitter materials [J].Chem Phys Chem,2017,18(15):2024-2032.
[5] LEE J H,CHEN C H,LEE P H,et al.Blue organic light-emitting diodes:current status,challenges,and future outlook [J].Journal of Material Chemistry C,2019,20(7):5874-5888.
[6] HUNG L S,TANG C W,MASON M G.Enhanced electron injection in organic electroluminescence devices using an Al/LiF electrode [J].Applied Physics Letters,1997,70(2):152-154.
[7] MASON M G,HUNG L S,TANG C W,et al.Characterization of treated indium-tin-oxide surfaces used in electroluminescent devices [J].Journal of Applied Physics,1999,86(3):1688-1692.
[8] SHEN Y L,JACOBS D B,MALLIARAS G G,et al.Modification of indium tin oxide for improved hole injection in organic light emitting diodes [J].Advanced Materials,2001,13(16):1234-1238.
[9] LEE J H,KIM J J.Interfacial doping for efficient charge injection in organic semiconductors [J].Physica Status Solidi A,2012,209(8):1399-1413.
[10] GU P Y,WANG Z R,LIU G F,et al.Synthesis,full characterization,and field effect transistor behavior of a stable pyrene-fused N-heteroacene with twelve linearly annulated six-membered rings [J].Chemistry of Materials,2017,29(10):4172-4175.
[11] ZHANG J,JIN J Q,XU H X,et al.Recent progress on organic donor-acceptor complexes as active elements in organic field-effect transistors [J].Journal of Materials Chemistry C,2018,6(14):3485-3498.
[12] MASTSUSHIMA T,KINOSHITA Y,MURATA H.Formation of ohmic hole injection by inserting an ultrathin layer of molybdenum trioxide between indium tin oxide and organic hole-transporting layers [J].Applied Physics Letters,2007,91(25):253504-253506.
[13] KRÖGER M,HAMWI S,MEYER J,et al.Role of the deep-lying electronic states of MoO₃ in the enhancement of hole-injection in organic thin films [J].Applied Physics Letters,2009,95(12):123301.
[14] MATSUSHIMA T,JIN G H,KANAI Y,et al.Interfacial charge transfer and charge generation in organic electronic devices [J].Organic Electronics,2011,12(3):520-528.
[15] MEYER J,HAMWI S,KRΜÖGER M,et al.Transition metal oxides for organic electronics:energetics,device physics and applications [J].Advanced Materials,2012,24(40):5408-5427.
[16] SHIN W J,LEE J Y,KIM J C,et al.Bulk and interface properties of molybdenum trioxide-doped hole transporting layer in organic light-emitting diodes [J].Organic Electronics,2008,9(3):333-338.
[17] TIAN B L,BAN D Y,AZIZ H.Enhanced bulk conductivity and bipolar transport in mixtures of MoO_x and organic hole transport materials [J].Thin Solid Films,2013,536:202-205.
[18] SZE P W,HUANG C J,LIN F Y,et al.Enhancement performances in white organic light-emitting diode (WOLED) by formation of charge-transfer (CT) complex [J].Journal of Nanoscience and Nanotechnology,2015,15(11):9178-9183.
[19] TSE S C,KWOK K C,SO S K.Electron transport in naphthylamine-based organic compounds [J].Applied Physics Letters,2006,89(26):262102.
[20] KWON J W,LIM J T,YEOM G Y.Light-emitting characteristics of organic light-emitting diodes with the MoO_x-doped NPB and C₆₀/LiF layer [J].Thin Solid Films,2010,518(22):6339-6342.
[21] YU A R,PEI Y,YI R C,et al.Study on mobile hole generation in blend MoO₃:CuPc by capacitance-voltage method [J].Organic Electronics,2017,46:121-125.
[22] GAO C H,ZHU X Z,ZHANG L,et al.Comparative studies on the inorganic and organic p-type dopants in organic light emitting diodes with enhanced hole injection [J].Applied Physics Letters,2013,102(15):153301.
[23] MO H W,NG T W,TO C H,et al.Infrared organic photovoltaic device based on charge transfer interaction between organic materials [J].Organic Electronics,2013,14(1):291-294.

Study of optical and electrical properties of MoO₃doped organic semiconductor NPB

PDF

Knowledge

Abstract

Cite this article

share this article

References

Related Articles 9

Recommended Articles

Metrics

Comments

[1]	JIA Jian-gang, SU Cheng, XIA Ting-xi. Effect of PVA coating on the performance of electroless copper plating layer on the surface of Kevlar fiber [J]. Journal of Lanzhou University of Technology, 2022, 48(5): 8-14.
[2]	LÜ Kang-le, SONG Jun-mi. Preparation of nano-ZnO by gentle liquid phase method and its photocatalytic performance [J]. Journal of Lanzhou University of Technology, 2022, 48(4): 25-29.
[3]	LIU Wen-wu, LIU Yu-cheng, CUI Chong-yang, NIU Sheng-tao RAN Fen, QUE Yu-lun. Effect of CdBr₂ on defect state regulation and photoelectric properties of CsPbBr₃ perovskite grain boundary [J]. Journal of Lanzhou University of Technology, 2021, 47(5): 24-29.
[4]	LI Wei-xue, GAO Shan-shan, DAI Jian-feng, SUO Zhong-qiang, WANG Qing. First-principles calculation of optical properties of Cu/Al co-doped ZnO [J]. Journal of Lanzhou University of Technology, 2021, 47(4): 6-12.
[5]	YU Fu-cheng, NAN Dong-mei, WANG Bo-long, LI Yuan-meng, LIU Zheng-yan, HE Ling. The effect of Ag nanoparticles modification on photocatalytic properties of La-doped ZnO nanorods [J]. Journal of Lanzhou University of Technology, 2021, 47(1): 28-35.
[6]	CHEN Zhen-bin, ZHOU Yong-shan, ZHANG Xia-yun. Functionalization of Fe₃O₄ magnetic nanoparticles using RAFT reagent [J]. Journal of Lanzhou University of Technology, 2020, 46(5): 27-33.
[7]	HE Ling, QIN Xing-wen, FENG Yu-jie, PAN Li-li, SUN Wei-min, LI Wen-sheng. Preparation of YAG-ZrO₂ composite nanofibers by electrospinning [J]. Journal of Lanzhou University of Technology, 2020, 46(3): 28-33.
[8]	LIANG Ze-fen, MA Sheng-ling, XUE Hong-tao, TANG Fu-ling WANG Lan-xi, FAN Ding. Effects of degree of fluorination and uniaxial stress on structural stability and energy band of fluorinated graphene [J]. Journal of Lanzhou University of Technology, 2020, 46(2): 29-34.
[9]	LI Cui-xia, SHI Xiao, SUN Hui-zhen, WANG Hui-kang, KANG Wei-chao. Preparation of mesoporous rGO/TiO₂hollow blocks with wide spectral response and photocatalytic performance related with them [J]. Journal of Lanzhou University of Technology, 2020, 46(1): 32-36.